Electronic Components Datasheet Search |
|
SI3805DV-T1-E3 Datasheet(PDF) 8 Page - Vishay Siliconix |
|
SI3805DV-T1-E3 Datasheet(HTML) 8 Page - Vishay Siliconix |
8 / 10 page www.vishay.com 8 Document Number: 68912 S-82297-Rev. A, 22-Sep-08 Vishay Siliconix Si3805DV New Product SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Reverse Current vs. Junction Temperature Capacitance TJ - Junction Temperature (°C) - 50 - 25 0 25 50 75 100 125 150 10-8 10-3 10-1 VR = 15 V 10-7 10-6 10-5 10-4 10-2 VR = 10 V VR = 20 V 0 50 100 150 200 250 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Forward Diode Voltage Single Pulse Power, Junction-to-Ambient 0.0 0.2 0.4 0.6 0.8 1.0 10 VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 0.01 0.1 1 0.001 0 5 10 15 20 0 1 1 1 0 0 . 0 0.01 Time (s) 0.1 |
Similar Part No. - SI3805DV-T1-E3 |
|
Similar Description - SI3805DV-T1-E3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |