SI4340CDY datasheet(9/12 Pages) VISHAY

Part #	SI4340CDY

Description	Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 68398

S-81547-Rev. B, 07-Jul-08

www.vishay.com

9

Vishay Siliconix

Si4340CDY

New Product

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Reverse Current vs. Junction Temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150 °C

10

VSD -Source-to-Drain Voltage (V)

1

100

TJ = 25 °C

10-4

10-3

10-2

10-1

1

10

100

- 50

- 25

0

25

50

75

100

125

150

TJ - Temperature (°C)

VDS = 16 V

VDS = 20 V

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.000

0.005

0.010

0.015

0.020

02

4

6

8

10

VGS - Gate-to-Source Voltage (V)

TJ =25 °C

TJ = 125 °C

ID =15.2A

0

20

40

60

80

Time (s)

10

1000

0.1

0.01

0.001

100

1

Safe Operating Area, Junction-to-Ambient

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

10 ms

100 ms

10 s

DC

Limited byRDS(on)*

BVDSS

Limited

1ms

100 µs

1s

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SI4340CDY Datasheet(PDF) 9 Page - Vishay Siliconix

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