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SI4340CDY Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4340CDY Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 12 page Vishay Siliconix Si4340CDY New Product Document Number: 68398 S-81547-Rev. B, 07-Jul-08 www.vishay.com 1 Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • DC/DC Converters - Game Stations - Notebook PC Logic PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) Channel-1 20 0.0094 at VGS = 10 V 14.1 9.6 0.0125 at VGS = 4.5 V 12.2 Channel-2 20 0.008 at VGS = 10 V 20 14.1 0.0095 at VGS = 4.5 V 18.9 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 20 0.55 V at 2.5 A 2 D1 S1 D1 S1 G1 D2 G2 D2 SO-14 11 12 13 14 Top View 2 3 4 1 S2 D2 S2 D2 S2 D2 8 9 10 5 6 7 Ordering Information: Si4340CDY-T1-E3 (Lead (Pb)-free) G1 S1 D1 N-Channel 1 MOSFET G2 S2 D2 N-Channel 2 MOSFET Schottky Diode Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions for channel 1 is 110 °C/W and channel 2 is 87 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 Channel-2 Unit Drain-Source Voltage VDS 20 20 V Gate-Source Voltage VGS ± 20 ± 16 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 14.1 20 A TC = 70 °C 11.2 16.5 TA = 25 °C 11.5b, c 15.2b, c TA = 70 °C 9.2b, c 12.2b, c Pulsed Drain Current IDM 40 50 Source-Drain Current Diode Current TC = 25 °C IS 2.5 4.5 TA = 25 °C 1.7b, c 2.5b, c Single Pulse Avalanche Current L = 0.1 mH IAS 5 Single Pulse Avalanche Energy EAS 1.25 mJ Maximum Power Dissipation TC = 25 °C PD 35.4 W TC = 70 °C 1.9 3.5 TA = 25 °C 2b, c 3b, c TA = 70 °C 1.3b, c 1.9b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Channel-2 Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 53 62.5 35 42 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 35 42 18 23 RoHS COMPLIANT |
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