SI4340CDY datasheet(1/12 Pages) VISHAY

Part #	SI4340CDY

Description	Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

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Vishay Siliconix

Si4340CDY

New Product

Document Number: 68398

S-81547-Rev. B, 07-Jul-08

www.vishay.com

1

Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

FEATURES

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

100 % UIS Tested

APPLICATIONS

•

DC/DC Converters

- Game Stations

- Notebook PC Logic

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

Channel-1

20

0.0094 at VGS = 10 V

14.1

9.6

0.0125 at VGS = 4.5 V

12.2

Channel-2

20

0.008 at VGS = 10 V

20

14.1

0.0095 at VGS = 4.5 V

18.9

SCHOTTKY PRODUCT SUMMARY

VDS (V)

VSD (V) Diode Forward Voltage

IF (A)

20

0.55 V at 2.5 A

2

D1

S1

D1

S1

G1

D2

G2

D2

SO-14

11

12

13

14

Top View

2

3

4

1

S2

D2

S2

D2

S2

D2

8

9

10

5

6

7

Ordering Information: Si4340CDY-T1-E3 (Lead (Pb)-free)

G1

S1

D1

N-Channel 1

MOSFET

G2

S2

D2

N-Channel 2

MOSFET

Schottky Diode

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions for channel 1 is 110 °C/W and channel 2 is 87 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Channel-1

Channel-2

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

± 20

± 16

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

14.1

20

A

TC = 70 °C

11.2

16.5

TA = 25 °C

11.5b, c

15.2b, c

TA = 70 °C

9.2b, c

12.2b, c

Pulsed Drain Current

IDM

40

50

Source-Drain Current Diode Current

TC = 25 °C

IS

2.5

4.5

TA = 25 °C

1.7b, c

2.5b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

5

Single Pulse Avalanche Energy

EAS

1.25

mJ

Maximum Power Dissipation

TC = 25 °C

PD

35.4

W

TC = 70 °C

1.9

3.5

TA = 25 °C

2b, c

3b, c

TA = 70 °C

1.3b, c

1.9b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Channel-1

Channel-2

Unit

Typ.

Max.

Typ.

Max.

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

53

62.5

35

42

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

35

42

18

23

RoHS

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