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Document Number: 83607

222

Rev. 1.5, 07-May-08

CNY17F

Vishay Semiconductors

Optocoupler, Phototransistor Output,

no Base Connection

Note

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied

at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for

extended periods of the time can adversely affect reliability.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6.0

V

DC forward current

60

mA

Surge forward current

t

≤ 10 µs

2.5

A

Power dissipation

100

mW

OUTPUT

Collector emitter breakdown voltage

70

V

Collector current

50

mA

t

≤ 1.0 ms

100

mA

Total power dissipation

150

mW

COUPLER

Isolation test voltage

between emitter and detector referred to

standard climate 23/50 DIN 50014

5300

Creepage

≥ 7.0

mm

Clearance

≥ 7.0

mm

Isolation thickness between

emitter and detector

≥ 0.4

mm

Comparative tracking index

per DIN IEC 112/VDE 0303, part 1

175

Isolation resistance

Ω

Storage temperature range

- 55 to + 150

°C

Ambient temperature range

- 55 to + 100

°C

Junction temperature

100

°C

Soldering temperature

max. 10 s, dip soldering: distance to

seating plane

≥ 1.5 mm

260

°C

ELECTRICAL CHARACTERISTCS

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

1.25

1.65

V

Breakdown voltage

6.0

V

Reverse current

0.01

10

µA

Capacitance

25

pF

Thermal resistance

750

K/W

OUTPUT

Collector emitter capacitance

5.2

pF

Base collector capacitance

6.5

pF

Emitter base capacitance

7.5

pF

Thermal resistance

500

K/W