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CNY17F-4X007 Datasheet(PDF) 2 Page - Vishay Siliconix |
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CNY17F-4X007 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83607 222 Rev. 1.5, 07-May-08 CNY17F Vishay Semiconductors Optocoupler, Phototransistor Output, no Base Connection Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6.0 V DC forward current IF 60 mA Surge forward current t ≤ 10 µs IFSM 2.5 A Power dissipation Pdiss 100 mW OUTPUT Collector emitter breakdown voltage BVCEO 70 V Collector current IC 50 mA t ≤ 1.0 ms IC 100 mA Total power dissipation Pdiss 150 mW COUPLER Isolation test voltage between emitter and detector referred to standard climate 23/50 DIN 50014 VISO 5300 VRMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 Isolation resistance VIO = 500 V RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Junction temperature Tj 100 °C Soldering temperature max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Tsld 260 °C ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 60 mA VF 1.25 1.65 V Breakdown voltage IR = 10 µA VBR 6.0 V Reverse current VR = 6.0 V IR 0.01 10 µA Capacitance VR = 0 V, f = 1.0 MHz CO 25 pF Thermal resistance Rth 750 K/W OUTPUT Collector emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 5.2 pF Base collector capacitance VCE = 5.0 V, f = 1.0 MHz CBC 6.5 pF Emitter base capacitance VCE = 5.0 V, f = 1.0 MHz CEB 7.5 pF Thermal resistance Rth 500 K/W |
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