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D TrenchFETr Power MOSFETS

Handling In Compact Footprint

APPLICATIONS

D Load Switch

D PA Switch

D Battery Switch

Si5908DC

Vishay Siliconix

New Product

Document Number: 73074

S-41641—Rev. A, 06-Sep-04

www.vishay.com

1

Dual N-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

5.9

20

5.6

5.2

Bottom View

N-Channel MOSFET

1206-8 ChipFETr

1

Marking Code

CC

XXX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si5908DC-T1—E3

N-Channel MOSFET

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

8

V

5.9

4.4

4.2

3.1

A

Pulsed Drain Current

20

A

1.8

0.9

2.1

1.1

W

1.1

0.6

W

Operating Junction and Storage Temperature Range

--55 to 150

_C

260

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

M

i

J

ti

t A bi

t

≤ 5sec

R

50

60

Steady State

90

110

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

30

40

C/

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation

process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-

nection.

c.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.