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SI5933CDC-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI5933CDC-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 68822 S-81731-Rev. A, 04-Aug-08 Vishay Siliconix Si5933CDC New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Forward Diode Voltage vs. Temp. Threshold Voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.01.2 1.41.6 TJ = 150 °C TJ = 25 °C VSD -Source-to-Drain Voltage (V) 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.05 0.10 0.15 0.20 0.25 024 6 8 TJ =25 °C TJ = 125 °C ID =- 2.5 A VGS - Gate-to-Source Voltage (V) 0 1 2 3 4 5 0.001 0.01 0.1 1 10 100 Time (s) Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse Limited byRDS(on)* BVDSS Limited 1ms 100 µs 10 ms 100 ms 1s,10s DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified |
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