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TCET1110 Datasheet(PDF) 4 Page - Vishay Siliconix |
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TCET1110 Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 11 page  www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83546 4 Rev. 1.8, 21-Nov-07 TCET1110/TCET1110G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 50 mA VF 1.25 1.6 V Junction capacitance VR = 0, f = 1 MHz Cj 50 pF OUTPUT Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage IE = 100 µA VECO 7V Collector emitter cut-off current VCE = 20 V, If = 0, E = 0 ICEO 10 100 nA COUPLER Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz Coupling capacitance f = 1 MHz Ck 0.3 pF CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT IC/IF VCE = 5 V, IF = 1 mA TCET1111 TCET1111G CTR 13 30 % TCET1112 TCET1112G CTR 22 45 % TCET1113 TCET1113G CTR 34 70 % TCET1114 TCET1114G CTR 56 90 % VCE = 5 V, IF = 5 mA TCET1110 TCET1110G CTR 50 600 % TCET1115 TCET1115G CTR 50 150 % TCET1116 TCET1116G CTR 100 300 % TCET1117 TCET1117G CTR 80 160 % TCET1118 TCET1118G CTR 130 260 % TCET1119 TCET1119G CTR 200 400 % VCE = 5 V, IF = 10 mA TCET1111 TCET1111G CTR 40 80 % TCET1112 TCET1112G CTR 63 125 % TCET1113 TCET1113G CTR 100 200 % TCET1114 TCET1114G CTR 160 320 % |
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