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TEMD1030 Datasheet(PDF) 2 Page - Vishay Siliconix |
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TEMD1030 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 8 page  Document Number: 81564 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com Rev. 2.1, 08-Sep-08 437 TEMD1000, TEMD1020, TEMD1030, TEMD1040 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 50 mA VF 11.3 V Breakdown voltage IR = 100 µA, E = 0 V(BR) 60 V Reverse dark current VR = 10 V, E = 0 Iro 110 nA Diode capacitance VR = 5 V, f = 1 MHz, E = 0 CD 1.8 pF Reverse light current Ee = 1 mW/cm2, λ = 870 nm, VR = 5 V Ira 10 µA Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 512 µA Temperature coefficient of Ira VR = 5 V, λ = 870 nm, TKIra 0.2 %/K Absolute spectral sensitivity VR = 5 V, λ = 870 nm s( λ)0.60 A/W VR = 5 V, λ = 950 nm s( λ)0.55 A/W Angle of half sensitivity ϕ ± 15 deg Wavelength of peak sensitivity λ p 940 nm Range of spectral bandwidth λ 0.5 790 to 1050 nm Rise time VR = 10 V, RL = 50 Ω, λ = 820 nm tr 4ns Fall time VR = 10 V, RL = 50 Ω, λ = 820 nm tf 4ns 20 1 10 100 1000 T amb - Ambient Temperature (°C) 94 8427 V R = 10 V 100 80 60 40 0.6 0.8 1.0 1.2 1.4 T amb - Ambient Temperature (°C) 94 8416 V R = 5 V λ = 950 nm 0 100 80 60 40 20 |
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