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TFDU4101 Datasheet(PDF) 3 Page - Vishay Siliconix |
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TFDU4101 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 16 page TFDU4101 Document Number 81288 Rev. 1.2, 04-Dec-07 Vishay Semiconductors www.vishay.com 3 Absolute Maximum Ratings Reference point pin, GND unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Eye safety information Reference point pin: GND unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Notes: *) Due to the internal limitation measures the device is a "class1" device under all conditions **) IrDA specifies the max. intensity with 500 mW/sr Definitions: In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes: SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhy: 1.0 MIR: 576 kbit/s to 1152 kbit/s FIR: 4 Mbit/s VFIR: 16 Mbit/s MIR and FIR were implemented with the physical layer standard IrPhy 1.1, followed by IrPhy 1.2, adding the SIR low power standard. IrPhy 1.3 extended the low power option to MIR and FIR and VFIR was added with IrPhy 1.4. A new version of the standard in any case obsoletes the former version. Note: We apologize to use sometimes in our documentation the abbreviation LED and the word light emitting diode instead of infrared emitting diode (IRED) for IR-emitters. That is by definition wrong; we are here following just a bad trend. Typical values are for design aid only, not guaranteed nor subject to production testing and may vary with time. Parameter Test conditions Symbol Min. Typ. Max. Unit Supply voltage range, transceiver - 0.3 V < VCC2 < 6.0 V VCC1 - 0.5 6.0 V Supply voltage range, transmitter - 0.5 V < VCC1 < 6.0 V VCC2 - 0.5 6.0 V Voltage at RXD - 0.5 V < VCC1 < 6.0 V VRXD - 0.5 VCC1 + 0.5 V Voltage at all inputs and outputs Vin > VCC1 is allowed Vin - 0.5 6.0 V Input currents For all pins, except IRED anode pin 10 mA Output sinking current 25 mA Power dissipation See derating curve PD 250 mW Junction temperature TJ 125 °C Ambient temperature range (operating) Tamb - 30 + 85 °C Storage temperature range Tstg - 30 + 85 °C Soldering temperature See “Recommended Solder Profile” 260 °C Average output current, pin 1 IIRED (DC) 80 mA Repetitive pulse output current, pin 1 to pin 2 < 90 µs, ton < 20 % IIRED (RP) 400 mA Parameter Test conditions Symbol Min. Typ. Max. Unit Virtual source size Method: EN ISO 11146 d 2.6 mm Maximum Intensity for Class 1 IEC60825-1 or EN60825-1, edition Jan. 2001 operating below the absolute maximum ratings Ie *) (500)**) mW/sr |
Similar Part No. - TFDU4101_07 |
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Similar Description - TFDU4101_07 |
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