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TFDU4101 Datasheet(PDF) 3 Page - Vishay Siliconix

Part # TFDU4101
Description  Infrared Transceiver Module (SIR, 115.2 kbit/s) for IrDA® Applications
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TFDU4101 Datasheet(HTML) 3 Page - Vishay Siliconix

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TFDU4101
Document Number 81288
Rev. 1.2, 04-Dec-07
Vishay Semiconductors
www.vishay.com
3
Absolute Maximum Ratings
Reference point pin, GND unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Eye safety information
Reference point pin: GND unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Notes:
*) Due to the internal limitation measures the device is a "class1" device under all conditions
**) IrDA specifies the max. intensity with 500 mW/sr
Definitions:
In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes:
SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhy: 1.0
MIR: 576 kbit/s to 1152 kbit/s
FIR: 4 Mbit/s
VFIR: 16 Mbit/s
MIR and FIR were implemented with the physical layer standard IrPhy 1.1, followed by IrPhy 1.2, adding the SIR low power standard.
IrPhy 1.3 extended the low power option to MIR and FIR and VFIR was added with IrPhy 1.4. A new version of the standard in any case
obsoletes the former version.
Note: We apologize to use sometimes in our documentation the abbreviation LED and the word light emitting diode instead of infrared
emitting diode (IRED) for IR-emitters. That is by definition wrong; we are here following just a bad trend.
Typical values are for design aid only, not guaranteed nor subject to production testing and may vary with time.
Parameter
Test conditions
Symbol
Min.
Typ.
Max.
Unit
Supply voltage range,
transceiver
- 0.3 V < VCC2 < 6.0 V
VCC1
- 0.5
6.0
V
Supply voltage range,
transmitter
- 0.5 V < VCC1 < 6.0 V
VCC2
- 0.5
6.0
V
Voltage at RXD
- 0.5 V < VCC1 < 6.0 V
VRXD
- 0.5
VCC1
+ 0.5
V
Voltage at all inputs and outputs
Vin > VCC1 is allowed
Vin
- 0.5
6.0
V
Input currents
For all pins, except IRED anode
pin
10
mA
Output sinking current
25
mA
Power dissipation
See derating curve
PD
250
mW
Junction temperature
TJ
125
°C
Ambient temperature range
(operating)
Tamb
- 30
+ 85
°C
Storage temperature range
Tstg
- 30
+ 85
°C
Soldering temperature
See “Recommended Solder
Profile”
260
°C
Average output current, pin 1
IIRED (DC)
80
mA
Repetitive pulse output current,
pin 1 to pin 2
< 90 µs, ton < 20 %
IIRED (RP)
400
mA
Parameter
Test conditions
Symbol
Min.
Typ.
Max.
Unit
Virtual source size
Method: EN ISO 11146
d
2.6
mm
Maximum Intensity for Class 1
IEC60825-1 or
EN60825-1, edition Jan. 2001
operating below the absolute
maximum ratings
Ie
*)
(500)**)
mW/sr


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