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TSHA5500 Datasheet(PDF) 1 Page - Vishay Siliconix |
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TSHA5500 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81020 156 Rev. 1.5, 05-Sep-08 TSHA5500, TSHA5501, TSHA5502, TSHA5503 Vishay Semiconductors DESCRIPTION The TSHA550. series are infrared, 875 nm emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λ p = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Infrared remote control and free air data transmission systems with comfortable radiation angle • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass Note Test conditions see table “Basic Characteristics” Note MOQ: minimum order quantity 94 8390 PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λ P (nm) tr (ns) TSHA5500 20 ± 24 875 600 TSHA5501 25 ± 24 875 600 TSHA5502 30 ± 24 875 600 TSHA5503 35 ± 24 875 600 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHA5500 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA5501 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA5502 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA5503 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge forward current tp = 100 µs IFSM 2.5 A Power dissipation PV 180 mW |
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