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TN0200K Datasheet(PDF) 3 Page - Vishay Siliconix |
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TN0200K Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page  Document Number: 72678 S-71198–Rev. B, 18-Jun-07 www.vishay.com 3 Vishay Siliconix TN0200K New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.0 0.2 0.4 0.6 0.8 1.0 01234567 ID – Drain Current (A) VGS = 2.5 V VGS = 4.5 V 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 VDS = 10 V ID = 0.6 A Qg – Total Gate Charge (nC) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 150 °C TJ = 25 °C 5 0.1 0.001 VSD – Source-to-Drain Voltage (V) 1 0.01 Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage 0 25 50 75 100 125 150 175 200 0 4 8 12 16 20 VDS – Drain-to-Source Voltage (V) Crss Coss Ciss 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 0.6 A TJ – Junction Temperature (°C) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 012345 ID = 0.6 A VGS – Gate-to-Source Voltage (V) |
Similar Part No. - TN0200K_07 |
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Similar Description - TN0200K_07 |
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