BF970 datasheet(2/5 Pages) VISHAY

Part #	BF970

Description	Silicon PNP Planar RF Transistor

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number 85006

Rev. 1.5, 05-Sep-08

BF979

Vishay Semiconductors

Electrical AC Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics (Tamb = 25

°C unless otherwise specified)

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Transition frequency

- VCE = 10 V, - IC = 10 mA,

f = 300 MHz

fT

1750

MHz

- VCE = 10 V, - IC = 30 mA,

f = 300 MHz

fT

1300

MHz

Collector-base capacitance

- VCB = 10 V, f = 100 MHz

Ccb

0.6

pF

Noise figure

- VCE = 10 V, - IC = 10 mA,

ZS = 50 Ω, f = 800 MHz

F3.4

4.2

dB

Power gain

- VCE = 10 V, - IC = 10 mA,

ZS = 50 Ω, ZL = 500 Ω,

f = 800 MHz

Gpb

16

dB

Collector current for Gpbmax

- VCE = 10 V, ZL = 500 Ω,

f = 800 MHz

- IC

10

mA

Figure 1. Total Power Dissipation vs. Ambient Temperature

Figure 2. Transition Frequency vs. Collector Current

(°C)

0

300

600

900

1200

1500

1800

2100

0

5

10

15

20

25

30

35

–IC – Collector Current ( mA )

12848

–VCB =10V

f = 300 MHz

Figure 3. Collector Base Capacitance vs. Collector Base Voltage

0.0

0.2

0.4

0.6

0.8

1.0

0

4

8

12

16

20

–VCB – Collector Base Voltage(V)

12876

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