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LS103C-GS08 Datasheet(HTML) 2 Page - Vishay Siliconix

Part No. LS103C-GS08
Description  Small Signal Schottky Diodes
Download  6 Pages
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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LS103C-GS08 Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Document Number 85631
Rev. 1.3, 17-Mar-06
LS103A / 103B / 103C
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction to ambient air
l = 4 mm, TL = constant
RthJA
250
K/W
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Reverse Breakdown Voltage
IR = 10 µA
LS103A
V(BR)R
40
V
LS103B
V(BR)R
30
V
LS103C
V(BR)R
20
V
Leakage current
VR = 30 V
LS103A
IR
5µA
VR = 20 V
LS103B
IR
5µA
VR = 10 V
LS103C
IR
5µA
Forward voltage drop
IF = 20 mA
VF
370
mV
IF = 200 mA
VF
600
mV
Diode capacitance
VR = 0 V, f = 1 MHz
CD
50
pF
Reverse recovery time
IF = IR = 50 to 200 mA,
recover to 0.1 IR
trr
10
ns
Figure 1. Forward Current vs. Forward Voltage
0 100 200 300 400 500 600 700 800 900 1000
V
F - Forward Voltage (mV)
16765
1000
100
10
1
0.1
0.01
0.001
Figure 2. Forward Current vs. Forward Voltage
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
V
F - Forward Voltage (V)
16766


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