Document Number: 94365

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Revision: 29-Apr-08

7

ST103SP Series

Inverter Grade Thyristors

(Stud Version), 105 A

Vishay High Power Products

Fig. 13 - Frequency Characteristics

Fig. 14 - Maximum On-State Energy Power Loss Characteristics

Fig. 15 - Gate Characteristics

10

100

1000

10 000

100

1000

10 000

Pulse Basewidth (µs)

Snubber circuit

R

C

V

ST103S Series

Trapezoidal pulse

T

dI/dt = 100 A/µs

t

p

50 Hz

100

200

400

1000

1500

2500

5000

10 000

10

100

1000

10 000

Pulse Basewidth (µs)

100

1000

10 000

50 Hz

400

2500

100

1500

200

5000

10 000

1000

Snubber circuit

R

C

V

ST103S Series

Trapezoidal pulse

T

dI/dt = 100 A/µs

t

p

Pulse Basewidth (µs)

10

100

1000

10 000

10

100

1000

10 000

t

p

ST103S Series

Sinusoidal pulse

100 000

0.1

0.2

0.5

2 3

1

5 10

20 joules per pulse

Pulse Basewidth (µs)

10

100

1000

10 000

10

100

1000

10 000

100 000

0.1

0.2

0.5

2 3

1

5 10

20 joules per pulse

t

p

ST103S Series

Rectangular pulse

dI/dt = 50 A/µs

0.1

1

10

100

0.001

Instantaneous Gate Current (A)

0.01

0.1

1

10

100

V

GD

I

GD

(1)

(2)

(3)

Device: ST103S Series

(4)

Frequency limited by P

G(AV)

(a)

(b)

Rectangular gate pulse

a) Recommended load line for

rated di/dt: 20 V, 10

Ω; t

b) Recommended load line for

≤ 30 % rated di/dt: 10 V, 10 Ω

t

(1) P

(2) P

(3) P

(4) P