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TPS73725DCQG4 Datasheet(PDF) 2 Page - Texas Instruments |
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TPS73725DCQG4 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 22 page ABSOLUTE MAXIMUM RATINGS POWER DISSIPATION RATINGS (1) TPS737xx SBVS067H – JANUARY 2006 – REVISED MAY 2008 ....................................................................................................................................................... www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION(1) PRODUCT VOUT (2) TPS737xxyyyz XX is nominal output voltage (for example, 25 = 2.5V, 01 = Adjustable(3)). YYY is package designator. Z is package quantity. (1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. (2) Most output voltages of 1.25V and 1.3V to 5.0V in 100mV increments are available on a quick-turn basis using innovative factory package-level programming. Minimum order quantities apply; contact factory for details and availability. (3) For fixed 1.20V operation, tie FB to OUT. over operating free-air temperature range unless otherwise noted (1) PARAMETER TPS737xx UNIT VIN range –0.3 to +6.0 V VEN range –0.3 to +6.0 V VOUT range –0.3 to +5.5 V VNR, VFB range –0.3 to +6.0 V Peak output current Internally limited Output short-circuit duration Indefinite Continuous total power dissipation See Dissipation Ratings Table Junction temperature range, TJ –55 to +150 °C Storage temperature range –65 to +150 °C ESD rating, HBM 2 kV ESD rating, CDM 500 V (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under the Electrical Characteristics is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. DERATING FACTOR TA ≤ +25°C TA = +70°C TA = +85°C BOARD PACKAGE RθJC RθJA ABOVE TA = +25°C POWER RATING POWER RATING POWER RATING Low-K(2) DCQ 15 °C/W 53 °C/W 18.9mW/ °C 1.89W 1.04W 0.76W High-K(3) DCQ 15 °C/W 45 °C/W 22.2mW/ °C 2.22W 1.22W 0.89W High-K(3)(4) DRB 1.2 °C/W 40 °C/W 25.0mW/ °C 2.50W 1.38W 1.0W (1) See Power Dissipation in the Applications section for more information related to thermal design. (2) The JEDEC Low-K (1s) board design used to derive this data was a 3-inch × 3-inch, 2-layer board with 2-ounce copper traces on top of the board. (3) The JEDEC High-K (2s2p) board design used to derive this data was a 3-inch x 3-inch, multilayer board with 1-ounce internal power and ground planes and 2-ounce copper traces on the top and bottom of the board. (4) Based on preliminary thermal simulations. 2 Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated |
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