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PESDXS2UQ Datasheet(PDF) 6 Page - NXP Semiconductors |
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PESDXS2UQ Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series Notes 1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2. 2. Measured either across pins 1 and 3 or pins 2 and 3. Rdiff differential resistance PESD3V3S2UQ IR =5mA −− 40 Ω PESD5V0S2UQ IR =5mA −− 15 Ω PESD12VS2UQ IR =5mA −− 15 Ω PESD15VS2UQ IR =1mA −− 225 Ω PESD24VS2UQ IR = 0.5 mA −− 300 Ω SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT GRAPHICAL DATA tp (µs) 1103 102 10 001aaa726 103 102 104 Ppp (W) 10 Fig.4 Peak pulse power dissipation as a function of pulse time; typical values. Tamb =25 °C. tp = 8/20 µs exponential decaying waveform; see Fig.2. Tj (°C) 0 200 150 50 100 001aaa193 0.4 0.8 1.2 Ppp 0 Ppp(25˚C) Fig.5 Relative variation of peak pulse power as a function of junction temperature; typical values. Rev. 03 - 11 September 2008 6 of 13 |
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