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PESDXS2UQ Datasheet(PDF) 6 Page - NXP Semiconductors

Part # PESDXS2UQ
Description  Double ESD protection diodes in SOT663 package
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PESDXS2UQ Datasheet(HTML) 6 Page - NXP Semiconductors

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NXP Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
PESDxS2UQ series
Notes
1. Non-repetitive current pulse 8/20
µs exponential decay waveform; see Fig.2.
2. Measured either across pins 1 and 3 or pins 2 and 3.
Rdiff
differential resistance
PESD3V3S2UQ
IR =5mA
−−
40
PESD5V0S2UQ
IR =5mA
−−
15
PESD12VS2UQ
IR =5mA
−−
15
PESD15VS2UQ
IR =1mA
−−
225
PESD24VS2UQ
IR = 0.5 mA
−−
300
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
GRAPHICAL DATA
tp (µs)
1103
102
10
001aaa726
103
102
104
Ppp
(W)
10
Fig.4
Peak pulse power dissipation as a function
of pulse time; typical values.
Tamb =25 °C.
tp = 8/20 µs exponential decaying waveform; see Fig.2.
Tj (°C)
0
200
150
50
100
001aaa193
0.4
0.8
1.2
Ppp
0
Ppp(25˚C)
Fig.5
Relative variation of peak pulse power as a
function of junction temperature; typical
values.
Rev. 03 - 11 September 2008
6 of 13


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