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PESD15VS2UQ Datasheet(PDF) 4 Page - NXP Semiconductors |
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PESD15VS2UQ Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 13 page NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series ESD maximum ratings Notes 1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3. 2. Measured across either pins 1 and 3 or pins 2 and 3. SYMBOL PARAMETER CONDITIONS VALUE UNIT ESD electrostatic discharge capability IEC 61000-4-2 (contact discharge); notes 1 and 2 PESD3V3S2UQ 30 kV PESD5V0S2UQ 30 kV PESD12VS2UQ 30 kV PESD15VS2UQ 30 kV PESD24VS2UQ 23 kV HBM MIL-Std 883 PESDxS2UQ series 10 kV ESD standards compliance ESD STANDARD CONDITIONS IEC 61000-4-2; level 4 (ESD); see Fig.3 >15 kV (air); > 8 kV (contact) HBM MIL-Std 883; class 3 >4 kV handbook, halfpage 010 e−t 20 t ( µs) Ipp (%) 40 120 0 40 80 30 MLE218 100 % Ipp; 8 µs 50 % Ipp; 20 µs Fig.2 8/20 µs pulse waveform according to IEC 61000-4-5. 001aaa191 Ipp 100 % 90 % t 30 ns 60 ns 10 % tr = 0.7 to 1 ns Fig.3 ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2. Rev. 03 - 11 September 2008 4 of 13 |
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