2

SA60U

P r o d u c t I n n o v a t i o n F r o m

SA60

TheSA60isconstructedfromMOSFETtransistors.ESDhandlingproceduresmustbeobserved.

Theexposedsubstratecontainsberyllia(BeO).Donotcrush,machine,orsubjecttotemperatures

inexcessof850°Ctoavoidgeneratingtoxicfumes.

CAUTION

Parameter

Min

Typ

Max

Units

INPUT

ANALOGINPUTVOLTAGES

A,BOUT=50%DutyCycle

VDC

AOUT=100%DutyCycleHigh

VDC

BOUT=100%DutyCycleHigh

VDC

PWMINPUT

PWMPULSELOWVOLTAGE

0

0.8

VDC

PWMPULSEHIGHVOLTAGE

2.7

5.0

VDC

PWMFREQUENCY

45

250

KHz

DISABLEON

2.7

VDC

DISABLEOFF

0

0.8

VDC

OUTPUT

1.7

2.5

VDC

0.45

Ω

EFFICIENCY,10AOUTPUT

91

%

CURRENT,continuous

10

A

CURRENT,peak

t=100msec

15

A

SWITCHINGFREQUENCY

45

KHz

DEADTIME

90

nS

POWERSUPPLY

80

VDC

9.5

12

15

VDC

28

36

mA

5

mA

Parameter

Symbol

Min

Max

Units

80

V

OUTPUTCURRENT,peak

15

A

16

V

POWERDISSIPATION,internal(Note3)

156

W

TEMPERATURE,pinsolder,10smax.

260

°C

TEMPERATURE,junction(Note2)

150

°C

TEMPERATURERANGE,storage

−40

85

°C

OPERATINGTEMPERATURERANGE,case

−25

85

°C

.ChARACTERISTICSANDSPECIFICATIONS

ABSOLutE MAXIMuM RAtInGS

SPECIFICATIONS