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BQ24232RGTRG4 Datasheet(PDF) 2 Page - Texas Instruments |
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BQ24232RGTRG4 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 33 page DESCRIPTION (CONTINUED) ABSOLUTE MAXIMUM RATINGS (1) DISSIPATION RATINGS (1) bq24230 bq24232 SLUS821A – OCTOBER 2008 – REVISED DECEMBER 2008 .......................................................................................................................................... www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. The battery is charged in three phases: conditioning, constant current, and constant voltage. In all charge phases, an internal control loop monitors the IC junction temperature and reduces the charge current if the internal temperature threshold is exceeded. The charger power stage and charge current sense functions are fully integrated. The charger function has high-accuracy current and voltage regulation loops, charge status display, and charge termination. The input current limit and charge current are programmable using external resistors. ORDERING INFORMATION PART OPTIONAL VOVP VOUT(REG) VDPM MARKING NUMBER(1)(2) FUNCTION bq24230RGTR 6.6 V 4.4 V VO(REG) – 100 mV TD CGN bq24230RGTT 6.6 V 4.4 V VO(REG) – 100 mV TD CGN bq24232RGTR 10.5 V 4.4 V VO(REG) – 100 mV ITERM NXK bq24232RGTT 10.5 V 4.4 V VO(REG) – 100 mV ITERM NXK (1) The RGT package is available in the following options: R - taped and reeled in quantities of 3000 devices per reel. T - taped and reeled in quantities of 250 devices per reel. (2) This product is RoHS compatible, including a lead concentration that does not exceed 0.1% of total product weight, and is suitable for use in specified lead-free soldering processes. In addition, this product uses package materials that do not contain halogens, including bromine (Br) or antimony (Sb) above 0.1% of total product weight. over the 0°C to 125°C operating free-air temperature range (unless otherwise noted) VALUE UNIT IN (with respect to VSS) –0.3 to 28 V OUT (with respect to VSS) –0.3 to 7 V VI Input voltage BAT (with respect to VSS) –0.3 to 5 V EN1, EN2, CE, TS, ISET, PGOOD, CHG, ILIM, TMR, TD, –0.3 to 7 V ITERM (with respect to VSS) II Input current IN 600 mA OUT 600 mA IO Output current (continuous) BAT (Discharge mode) 600 mA Output sink current CHG, PGOOD 15 mA TJ Junction temperature –40 to 150 °C Tstg Storage temperature –65 to 150 °C (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to the network ground terminal unless otherwise noted. POWER RATING PACKAGE(2) RθJA RθJC TA ≤ 25°C TA = 85°C RGT (1) 39.47 °C/W 2.4 °C/W 2.3 W 225 mW (1) This data is based on using the JEDEC High-K board and the exposed die pad is connected to a Cu pad on the board. The pad is connected to the ground plane by a 2x3 via matrix. (2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. 2 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated Product Folder Link(s): bq24230 bq24232 |
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