2SC3669_04 datasheet(3/5 Pages) TOSHIBA

Part #	2SC3669

Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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3 / 5 page

2SC3669

2004-07-07

3

Collector current IC (A)

VCE – IC

Collector current IC (A)

VCE – IC

Collector-emitter voltage VCE (V)

IC – VCE

Collector current IC (A)

VCE – IC

Collector current IC (A)

hFE – IC

Collector current IC (A)

VCE (sat) – IC

10

0.01

500

Ta = 100°C

25

0.03

0.1

0.3

1

30

50

100

300

Common emitter

VCE = 2 V

−55

2

1

0

0.8

0.6

0.4

0.2

0.4

0.8

1.2

1.6

2.0

2.4

IB = 5 mA

10

15

20

50

30

Common emitter

Ta = 25°C

40

0.6

1

0

0.8

0.4

0.2

0.4

0.8

1.2

1.6

2.0

2.4

IB = 5 mA

10

20

30

50

70

Common emitter

Ta = −55°C

40

15

0.01

0.5

Ta = 100°C

25

0.03

0.1

0.3

1

0.03

0.05

0.1

0.3

Common emitter

IC/IB = 20

−55

0.05

0.5

1

0

0.8

0.6

0.4

0.2

0.4

0.8

1.2

1.6

2.0

2.4

IB = −5 mA 10

20

50

Common emitter

Ta = 100°C

15

30

40

2.0

0

1.6

1.2

0.8

0.4

2

4

6

8

10

12

Common emitter

Ta = 25°C

20

15

10

0

IB = 5 mA

35

25

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