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HSMS-282E-TR2G Datasheet(PDF) 9 Page - AVAGO TECHNOLOGIES LIMITED |
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HSMS-282E-TR2G Datasheet(HTML) 9 Page - AVAGO TECHNOLOGIES LIMITED |
9 / 15 page 9 Sampling Applications The six lead HSMS‑282P can be used in a sampling circuit, as shown in Figure 25. As was the case with the six lead HSMS‑282R in the mixer, the open bridge quad is closed with traces on the circuit board. The quad was not closed internally so that it could be used in other applications, such as illustrated in Figure 17. HSMS-282P sampling pulse sample point sampling circuit Figure 25. Sampling Circuit. Thermal Considerations The obvious advantage of the SOT‑323 and SOT‑363 over the SOT‑23 and SOT‑142 is combination of smaller size and extra leads. However, the copper leadframe in the SOT‑3x3 has a thermal conductivity four times higher than the Alloy 42 leadframe of the SOT‑23 and SOT‑143, which enables the smaller packages to dissipate more power. The maximum junction temperature for these three fami‑ lies of Schottky diodes is 150°C under all operating con‑ ditions. The following equation applies to the thermal analysis of diodes: Tj = (V f If + PRF) θjc + Ta (1) where T j = junction temperature T a = diode case temperature θ jc = thermal resistance V fIf = DC power dissipated P RF = RF power dissipated Note that θ jc, the thermal resistance from diode junction to the foot of the leads, is the sum of two component re‑ sistances, θ jc = θ pkg + θchip (2) Package thermal resistance for the SOT‑3x3 package is ap‑ proximately 100°C/W, and the chip thermal resistance for the HSMS‑282x family of diodes is approximately 40°C/W. The designer will have to add in the thermal resistance from diode case to ambient—a poor choice of circuit board material or heat sink design can make this number very high. Equation (1) would be straightforward to solve but for the fact that diode forward voltage is a function of tempera‑ ture as well as forward current. The equation for V f is: 11600 (Vf – If R s ) nT I f = I S e – 1 2 1 1 n – 4060 ( T – 298) I s = I 0 ( T ) e 298 (3) where n = ideality factor T = temperature in °K R s = diode series resistance and I S (diode saturation current) is given by 11600 (Vf – If R s ) nT I f = I S e – 1 2 1 1 n – 4060 ( T – 298) I s = I 0 ( T ) e 298 (4) Equation (4) is substituted into equation (3), and equa‑ tions (1) and (3) are solved simultaneously to obtain the value of junction temperature for given values of diode case temperature, DC power dissipation and RF power dissipation. |
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