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HSMS-2822-TR1G Datasheet(PDF) 7 Page - AVAGO TECHNOLOGIES LIMITED |
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HSMS-2822-TR1G Datasheet(HTML) 7 Page - AVAGO TECHNOLOGIES LIMITED |
7 / 15 page 7 Figure 14. Fabrication of Avago Diode Pairs. In high power applications, coupling of RF energy from the detector diode to the reference diode can introduce error in the differential detector. The HSMS‑282K diode pair, in the six lead SOT‑363 package, has a copper bar between the diodes that adds 10 dB of additional isola‑ tion between them. As this part is manufactured in the SOT‑363 package it also provides the benefit of being 40% smaller than larger SOT‑143 devices. The HSMS‑282K is illustrated in Figure 15—note that the ground connec‑ tions must be made as close to the package as possible to minimize stray inductance to ground. PA detector diode reference diode to differential amplifier Vbias HSMS-282K Figure 15. High Power Differential Detector. The concept of the voltage doubler can be applied to the differential detector, permitting twice the output voltage for a given input power (as well as improving input im‑ pedance and suppressing second harmonics). matching network differential amplifier HSMS-2825 HSMS-2825 bias Figure 16. Voltage Doubler Differential Detector. [3] Hans Eriksson and RaymondW.Waugh,“ATemperature Compensated Linear Diode Detector,” to be published. differential amplifier HSMS-282P bias matching network Figure 17. Voltage Doubler Differential Detector. However, care must be taken to assure that the two refer‑ ence diodes closely match the two detector diodes. One possible configuration is given in Figure 16, using two HSMS‑2825. Board space can be saved through the use of the HSMS‑282P open bridge quad, as shown in Figure 17. While the differential detector works well over tempera‑ ture, another design approach[3] works well for large signal detectors. See Figure 18 for the schematic and a physical layout of the circuit. In this design, the two 4.7 KΩ resis‑ tors and diode D2 act as a variable power divider, assuring constant output voltage over temperature and improving output linearity. RFin Vo D1 33 pF HSMS-2825 or HSMS-282K HSMS-282K 4.7 K Ω 33 pF 4.7 K Ω 4.7 K Ω D2 68 Ω 68 Ω RFin Vo Figure 18. Temperature Compensated Detector. In certain applications, such as a dual‑band cellphone handset operating at both 900 and 1800 MHz, the second harmonics generated in the power control output detec‑ tor when the handset is working at 900 MHz can cause problems. A filter at the output can reduce unwanted emissions at 1800 MHz in this case, but a lower cost so‑ lution is available[4]. Illustrated schematically in Figure 19, this circuit uses diode D2 and its associated passive components to cancel all even order harmonics at the detector’s RF input. Diodes D3 and D4 provide tempera‑ ture compensation as described above. All four diodes are contained in a single HSMS‑ 282R package, as illustrated in the layout shown in Figure 20. |
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