ELECTRICAL CHARACTERISTICS

.

STP3NB80

Characteristic

Symbol

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

800

V

Drain-Source Leakage Current

1

µA

Gate-body Leakage Current

100

nA

Gate-Source Leakage Current-Reverse

-100

nA

Gate Threshold Voltage

3.0

5.0

V

2.5

4.0

mhos

1.5

S

Input Capacitance

445

580

pF

Output Capacitance

60

80

pF

Reverse Transfer Capacitance

f = 1.0 MHz)

7

9

pF

Turn-On Delay Time

12

17

ns

Rise Time

10

14

ns

Turn-Off Delay Time

19

40

ns

Fall Time

10

20

ns

Total Gate Charge

17

24

nC

Gate-Source Charge

6.5

nC

Gate-Drain Charge

7.5

nC

Internal Drain Inductance

(Measured from the drain lead 0.25” from package to center of die)

4.5

nH

Internal Drain Inductance

(Measured from the source lead 0.25” from package to source bond pad)

7.5

nH

SOURCE-DRAIN DIODE CHARACTERISTICS

Forward On-Voltage(1)

1.6

V

Forward Turn-On Time

**

ns

Reverse Recovery Time

650

ns

ORDERING INFORMATION

Part Number

Package

STP3NB80

TO-220 Full Package

STP3NB80

POWER MOSFET

Page 2

* Pulse Test: Pulse Width

300µs, Duty Cycle

2%

** Negligible, Dominated by circuit inductance