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DN3125NW Datasheet(PDF) 1 Page - Supertex, Inc |
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DN3125NW Datasheet(HTML) 1 Page - Supertex, Inc |
1 / 2 page 1 12/13/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. DN3125 Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combina- tion produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and posi- tive temperature coefficient inherent in MOS devices. Character- istic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. * Die in wafer form. Features ❏ High input impedance ❏ Low input capacitance ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Applications ❏ Normally-on switches ❏ Solid state relays ❏ Converters ❏ Linear amplifiers ❏ Constant current sources ❏ Power supply circuits ❏ Telecom N-Channel Depletion-Mode Vertical DMOS FETs BVDSX /RDS(ON) IDSS BVDGX (max) (min) Die* 250V 20Ω 200mA DN3125NW Ordering Information Order Number / Package Absolute Maximum Ratings Drain-to-Source Voltage BVDSX Drain-to-Gate Voltage BVDGX Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55°C to +150°C |
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