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DN3525N8 Datasheet(PDF) 2 Page - Supertex, Inc |
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DN3525N8 Datasheet(HTML) 2 Page - Supertex, Inc |
2 / 4 page 2 90% 10% 90% 90% 10% 10% PULSE GENERATOR V DD R L OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 0V V DD R gen 0V -10V Switching Waveforms and Test Circuit Thermal Characteristics Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja I DR*IDRM @ TA = 25°C °C/W °C/W TO-243AA 360mA 600mA 1.6W† 15 78† 360mA 600mA * I D (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P D increase possible on ceramic substrate. DN3525 Electrical Characteristics (@ 25°C unless otherwise specified) Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Symbol Parameter Min Typ Max Unit Conditions BV DSX Drain-to-Souce Breakdown Voltage 250 V V GS = -5.0V, ID = 100µA V GS(OFF) Gate-to-Source OFF Voltage -1.5 -3.5 V V DS = 15V, ID = 1.0mA ∆V GS(OFF) Change in V GS(OFF) with Temperature 4.5 mV/°CV DS = 15V, ID = 1.0mA I GSS Gate Body Leakage Current 100 nA V GS = ±20V, VDS = 0V I D(OFF) Drain-to-Source Leakage Current 1.0 µAV GS = -5.0V, VDS = Max Rating 1.0 mA V GS = -5.0V, VDS = 0.8 Max Rating T A = 125°C I DSS Saturated Drain-to-Source Current 300 mA V GS = 0V, VDS = 15V R DS(ON) Static Drain-to-Source 6.0 Ω V GS = 0V, ID = 200mA ON-State Resistance ∆R DS(ON) Change in R DS(ON) with Temperature 1.1 %/°CV GS = 0V, ID = 200mA G FS Forward Transconductance 225 mg I D = 150mA, VDS=10V C ISS Input Capacitance 270 350 C OSS Common Source Output Capacitance 20 60 pF V GS = -5.0V, VDS = 25V, f =1.0Mhz C RSS Reverse Transfer Capacitance 5.0 20 t d(ON) Turn-ON Delay Time 20 ns V DD = 25V, t r Rise Time 25 I D = 150mA, t d(OFF) Turn-OFF Delay Time 25 R GEN = 25Ω, t f Fall Time 40 V GS = 0V to -10V V SD Diode Forward Voltage Drop 1.8 V V GS = -5.0V, ISD = 150mA t rr Reverse Recovery Time 800 ns V GS = -5.0V, ISD = 150mA |
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