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FMMT417 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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FMMT417 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type Transistors 1 www.kexin.com.cn 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 Avalanche Transistor FMMT417 Features High speed pulse generators SOT23 NPN Silicon Planar Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 320 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 6V Peak collector current ICM 60 A Collector current IC 500 mA Power dissipation Ptot 330 mW Operating and storage temperature range Tj,Tstg -55to+150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA 320 V Collector-emitter breakdown voltage * V(BR)CEO IC=100ìA 100 V Emitter-base breakdown voltage V(BR)EBO IE=10ìA 6V VCB=80V 0.1 ìA VCB=80V, Tamb=100 10 ìA Emitter cut-off current IEBO VEB=4V 0.1 ìA Collector-emitter saturation voltage * VCE(sat) IC=10mA,IB=1mA 0.5 V Base-emitter saturation voltage * VBE(sat) IC=10mA,IB=1mA 0.9 V VC=200V, CCE=620pF 15 A VC=250V, CCE=620pF 25 A Static Forward Current Transfer Ratio hFE IC=10mA,VCE=10V * 25 Transition frequency fT IC=10mA,VCE=20V,f=20MHz 40 MHz Collector-base capacitance Ccb VCB=20V, IE=0, f=1MHz 8pF * Pulse test: tp = 300 ìs; d 0.02. Collector cutoff current ICBO ISB Current in second breakdown Marking Marking 417 |
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Similar Description - FMMT417 |
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