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2SC4117 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC4117 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type Transistors 1 www.kexin.com.cn 1 Emitter 2 Base 3 Collector Silicon NPN Epitaxial 2SC4117 Features High voltage High hFE Low noise Small package Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5V Collector current IC 100 mA Base current IB 20 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 Storage temperature range Tstg -55to+125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 120 V, IE =0 0.1 ìA Emitter cut-off current IEBO VEB =5V, IC =0 0.1 ìA DC current gain hFE VCE =6 V, IC = 2 mA 200 700 Collector-emitter saturation voltage VCE (sat) IC =10mA, IB =1mA 0.3 V Transition frequency fT VCE =6V, IC = 1 mA 100 MHz Collector output capacitance Cob VCB =10V, IE = 0,f= 1 MHz 3.0 pF Noise figure NF VCE=6 V, IC=0.1 mA, f=1kHz,RG=10 K 1.0 10 dB hFE Classification Marking DG DL Rank GR BL hFE 200 400 350 700 |
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