2SD1280 datasheet(1/1 Pages) KEXIN

Part #	2SD1280

Description	Silicon NPN Epitaxial Planar Type

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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Silicon NPN Epitaxial Planar Type

2SD1280

Features

Low collector-emitter saturation voltage VCE(sat).

Satisfactory operation performances at high efficiency

with the lowvoltage power supply.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

20

V

Collector-emitter voltage

VCEO

20

V

Emitter-base voltage

VEBO

5V

Collector current

IC

1A

Peak collector current

ICP

2A

Collector power dissipation

PC

1W

Junction temperature

Tj

150

Storage temperature

Tstg

-55to+150

hFE Classification

Marking

Rank

Q

R

S

hFE

90

155

130

210

180

280

R

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-emitter voltage

VCEO

IC =1mA, IB =0

20

V

Emitter-base voltage

VEBO

IE =10ìA, IC =0

5

V

Collector-base cutoff current

ICBO

VCB =10V, IB =0

1

ìA

VCE =2V, IC = 0.5 A

90

280

VCE =2V, IC =1.5 A

50

Collector-emitter saturation voltage

VCE(sat) IC =1A, IB =50mA

0.5

V

Base-emitter saturation voltage

VBE(sat) IC = 500 mA, IB =50mA

1.2

V

Transition frequency

fT

VCB =6V, IE = -50 mA, f = 200 MHz

150

MHz

Collector output capacitance

Cob

VCB =6V, IE = 0, f = 1 MHz

18

pF

Forward current transfer ratio

hFE

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2SD1280 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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