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TCM680EPA Datasheet(PDF) 2 Page - TelCom Semiconductor, Inc |
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TCM680EPA Datasheet(HTML) 2 Page - TelCom Semiconductor, Inc |
2 / 7 page 4-14 TELCOM SEMICONDUCTOR, INC. TCM680 +5V TO ±10V VOLTAGE CONVERTER ABSOLUTE MAXIMUM RATINGS* VIN ..................................................................................................... +6.0V V + OUT .............................................................................................. +12.0V V – OUT ............................................................................................. – 12.0V V – OUT Short-Circuit Duration ............................ Continuous V + OUT Current ............................................................ 75mA VIN dV/dT .............................................................. 1V/µsec Figure 1. Test Circuit ELECTRICAL CHARACTERISTICS: VIN = +5V, TA = +25°C, test circuit Figure 1, unless otherwise indicated. Symbol Parameter Test Conditions Min Typ Max Unit Supply Voltage Range MIN. ≤ TA ≤ MAX., RL = 2kΩ 2.0 1.5 to 5.5 5.5 V Supply Current VIN = 3V, RL = ∞ — 0.5 1 mA VIN = 5V, RL = ∞ —1 2 VIN = 5V, 0°C ≤ TA ≤ +70°C, RL = ∞ — — 2.5 VIN = 5V, – 40°C ≤ TA ≤ +85°C, RL = ∞ —— 3 Negative Charge Pump Output IL – = 10mA, I L + = 0mA, VIN = 5V — 140 180 Ω Source Resistance IL –= 5mA, I L + = 0mA, VIN = 2.8V — 180 250 IL –= 10mA, I L + = 0mA, VIN = 5V: 0 °C ≤ TA ≤ +70°C — — 220 – 40 °C ≤ TA ≤ +85°C — — 250 Positive Charge Pump Output IL + = 10mA, I L – = 0mA, V IN = 5V — 140 180 Ω Source Resistance IL + = 5mA, I L – = 0mA, V IN = 2.8V — 180 250 IL + = 10mA, I L – = 0mA, V IN = 5V: 0 °C ≤ TA ≤ +70°C — — 220 – 40 °C ≤ TA ≤ +85°C — — 250 FOSC Oscillator Frequency — 21 — kHz PEFF Power Efficiency RL = 2kΩ —85— % VOUT EFF Voltage Conversion Efficiency V + OUT, RL = ∞ 97 99 — % V – OUT, RL = ∞ 97 99 — TelCom Semiconductor reserves the right to make changes in the circuitry or specifications detailed in this manual at any time without notice. Minimums and maximums are guaranteed. All other specifications are intended as guidelines only. TelCom Semiconductor assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement. Power Dissipation (TA ≤ 70°C) Plastic DIP ...................................................... 730mW Small Outline .................................................. 470mW Storage Temperature ............................ – 65 °C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300 °C C1 C1 C2 C3 C2 V IN V IN VOUT VOUT VOUT GND GND TCM680 4.7 µF 4.7 µF 10 µF C4 10 µF 8 7 6 5 4 3 2 1 VOUT C2 RL RL C1 – + – – + + + – + – PIN DESCRIPTION 8-Pin DIP/SOIC Symbol Description 1C1 – Input. Capacitor C1 negative terminal. 2C2 + Input. Capacitor C2 positive terminal. 3C2– Input. Capacitor C2 negative terminal. 4V – OUT Output. Negative output voltage (–2VIN). 5 GND Input. Device ground. 6VIN Input. Power supply voltage. 7C1 + Input. Capacitor C1 positive terminal. 8V + OUT Output. Positive output voltage (+2VIN) *Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or other conditions above those indicated in the operation section of the specification is not implied. Exposure to the Absolute Maximum Ratings conditions for extended periods of time may affect device reliability. |
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