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TCL1585-1.5CAB Datasheet(PDF) 8 Page - TelCom Semiconductor, Inc |
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TCL1585-1.5CAB Datasheet(HTML) 8 Page - TelCom Semiconductor, Inc |
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8 / 13 page  TCL1584 TCL1585 TCL1587 7A / 5A / 4.6A / 3A, FAST RESPONSE, LOW DROPOUT POSITIVE LINEAR VOLTAGE REGULATORS PRELIMINARY INFORMATION 8 TCL1584/1585/1587-04 6/6/97 When generating the overall thermal design, it is impor- tant to consider all sources of thermal resistance between the silicon die and ambient - junction-to-case ( ΘJC), case-to- heat sink ( ΘCH), heat sink-to-ambient (ΘHA). NOTE: there are two separate ΘJC specifications for the power transistor and the control circuitry. Both junction temperatures must be calculated and kept under each respective maximum limit to ensure proper operation. This ΘJC is for the physical path between the die and the bottom metal portion of the case (both TO-220 and DDPAK-3. Heat flow will be greatest through this path. It is important that good thermal coupling is made between the case and heat sink. If electrical isolation from the heat sink is not required, it is recom- mended that thermally conductive compound be used. Otherwise, use a thermally conductive dielectric spacer. The following is a thermal design example: Using a TCL1585-3.3 in a TO-220 package: Assumptions: TA = +70°C VIN = 5.25V (5V + 5%) VOUT = 3.30V IOUT = 4.6A ΘHA = 3.5°C/W (heat sink-to-ambient) ΘCH = 1.5°C/W (case-to-heat sink) ΘJC = 3°C/W (power transistor) ΘJC = 0.7°C/W (control circuitry) Power dissipation: PD = (VIN – VOUT)(IOUT) = (5.25 – 3.3)(4.6) = 8.97W Junction Temperatures: TJ = TA + PD(ΘHA + ΘCH + ΘJC) Control Circuitry: TJ = 70 + 8.97(3.5 + 1.5 + 0.7) = 121.1°C Power Transistor: TJ = 70 + 8.97(3.5 + 1.5 + 3) = 141.8°C These values for TJ fall within the maximum allowed junction temperature for each die section indicating ad- equate heat sinking with some margin. NOTE: Without heat sinking, the thermal resistance for the TO-220 and DDPAK-3 packages are 53 °C/W and 76 °C/W respectively. |
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