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KDB2570 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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KDB2570 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page  SMD Type MOSFET 1 www.kexin.com.cn 1.27+0.1 -0.1 1.27+0.1 -0.1 5.08+0.1 -0.1 0.1max 2.54+0.2 -0.2 2.54 4.57+0.2 -0.2 0.4+0.2 -0.2 0.81+0.1 -0.1 TO-263 Unit: mm 1Gate 2Drain 3 Source 150V N-Channel PowerTrench MOSFET KDB2570(FDB2570) Features 22 A, 150 V. RDS(ON) =80m @VGS =10V RDS(ON) =90m @VGS =6V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS 20 V Drain current-Continuous ID 22 A Drain current-Pulsed IDP 50 A Power dissipation 93 W Derate above 25 0.63 W/ Thermal Resistance Junction to Ambient RèJA 62.5 /W Thermal Resistance, Junction-to-Case RèJC 1.6 /W Channel temperature Tch 175 Storage temperature Tstg -55to+175 PD |
Similar Part No. - KDB2570 |
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Similar Description - KDB2570 |
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