SMD Type

MOSFET

1

-0.1

-0.1

-0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

-0.01

1GATE

2 SOURCE

3 DRAIN

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MOS Fied Effect Transistor

2SJ210

Features

Directly driven by Ics having a 5V poer supply.

Not necessary to consider driving current because of

its high input impedance.

Possible to reduce the number of parts by omitting the biasresistor.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

-60

V

Gate to source voltage

20

V

Drain current (DC)

200

mA

Drain current(pulse) *

400

mA

Power dissipation

200

m W

Channel temperature

150

Storage temperature

-55 to +150

*PW

10 ms; d

50%.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain cut-off current

-10

A

Gate leakage current

10

A

Gate cut-off voltage

A

-1.4

-1.8

-2.4

V

Forward transfer admittance

20

45

ms

10

15

6

10

Input capacitance

27

pF

Output capacitance

21

pF

Reverse transfer capacitance

3pF

Turn-on delay time

120

ns

Rise time

190

ns

Turn-off delay time

150

ns

Fall time

180

ns

Drain to source on-state resistance

Marking

Marking

H16