2SJ356 datasheet(2/2 Pages) KEXIN

Part #	2SJ356

Description	MOS Field Effect Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

www.kexin.com.cn

MOSFET

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain cut-off current

IDSS

VDS=-60V,VGS=0

-10

A

Gate leakage current

IGSS

VGS=

16/+10V,VDS=0

10

A

Gate cut-off voltage

VGS(off)

VDS=-10V,ID=-1mA

-1.0

-1.4

-2.0

V

Forward transfer admittance

Yfs

VDS=-10V,ID=-1.0A

1.0

S

VGS=-4V,ID=-1.0A

0.65

0.95

VGS=-10V,ID=-1.0A

0.41

0.50

Input capacitance

Ciss

270

pF

Output capacitance

Coss

145

pF

Reverse transfer capacitance

Crss

55

pF

Turn-on delay time

td(on)

4.3

ns

Rise time

tr

21

ns

Turn-off delay time

td(off)

115

ns

Fall time

tf

75

ns

Total Gate Charge

Qg

11.6

nC

Gate to Source Charge

QGS

1.0

nC

Gate Drain Charge

QGD

3.8

nC

Reverse Recovery time

trr

82

ns

Reverse Recovery Charge

Qrr

94

nC

VGS=-10V,ID=-2.0A,VDD=-48V,IG=-2mA

IF=2.0A,VGS=0,di/dt=50A/

s

VDS=-10V,VGS=0,f=1MHZ

VGS(on)=-10V,VDD=-25V,ID=--1A RL=255

,RG=10

Drain to source on-state resistance

RDS(on)

2SJ356

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