BAQ133, BAQ134, BAQ135

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Vishay Semiconductors

Rev. 1.8, 31-Jul-12

2

Document Number: 85536

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 1 - Reverse Current vs. Junction Temperature

Fig. 2 - Forward Current vs. Forward Voltage

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

1V

Reverse current

E

 300 Ix, rated V

R

13

nA

E

 300 Ix, rated V

0.5

μA

E

 300 Ix, V

BAQ133

0.5

1

nA

E

 300 Ix, V

BAQ134

0.5

1

nA

E

 300 Ix, V

BAQ135

0.5

1

nA

Breakdown voltage

BAQ133

40

V

BAQ134

70

V

BAQ135

140

V

Diode capacitance

3pF

04080

120

160

1

10

100

1000

10 000

200

94 9079

Scattering Limit

0

0.4

0.8

1.2

1.6

0.1

1

10

100

1000

2.0

94 9078

Scattering Limit