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KDB15N50 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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KDB15N50 Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 2 page 2 SMD Type www.kexin.com.cn MOSFET Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain to source breakdown voltage VDSS ID=250ìA VGS=0V 500 V Drain cut-off current IDSS VDS=500V,VGS=0,TC=25 25 A Gate leakage current IGSS VGS= 30V 100 nA Gate threshold voltage VGS(th) VDS =VGS,ID = 250ìA 2.0 3.4 4.0 V Drain to source on-state resistance RDS(on) VGS=10V,ID=7.5A 0.33 0.38 Ù Input capacitance Ciss 1850 pF Output capacitance Coss 230 pF Reverse transfer capacitance Crss 16 pF Forward Transconductance gfs VDD = 10V, ID =7.5A 10 S Total Gate Charge at 10V Qg(TOT) VGS = 10V, 33 41 nC Gate to Source Gate Charge Qgs VDS = 400V, 7.2 10 nC Gate to Drain "Miller" Charge Qgd ID = 15A 12 16 nC Turn-on delay time ton 9ns Rise time tr 5.4 ns Turn-off delay time toff 26 ns Fall time tf 5 ns Reverse Recovery Time trr ISD = 15A, diSD/dt = 100A/ìs 470 730 ns Reverse Recovered Charge QRR ISD = 15A, diSD/dt = 100A/ìs 5 6.6 ìC Continuous Source Current IS 15 A Pulsed Source Current1 ISM 60 A VDS=25V,VGS=0,f=1MHZ ID=15A,RG=6.2 ,VDD=250V,RD=17Ù KDB15N50(FDB15N50) |
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