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2SJ603 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SJ603 Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page  2 SMD Type www.kexin.com.cn MOSFET Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=-60V,VGS=0 -10 A Gate leakage current IGSS VGS= 20V,VDS=0 10 A Gate to source cutoff voltage VGS(off) VDS=-10V,ID=-1mA -1.5 -2.0 -2.5 V Forward transfer admittance Yfs VDS=-10V,ID=-13A 10 21 S VGS=-10V,ID=-13A 38 48 m VGS=-4.0V,ID=-13A 53 75 m Input capacitance Ciss 1900 pF Output capacitance Coss 350 pF Reverse transfer capacitance Crss 140 pF Turn-on delay time td(on) 10 ns Rise time tr 11 ns Turn-off delay time td(off) 66 ns Fall time tf 20 ns Total Gate Charge QG ID =-25A 38 nC Gate to Source Charge QGS VDD= -48 V 7 nC Gate to Drain Charge QGD VGS =-10 V 10 nC Body Diode Forward Voltage VF(S-D) IF = 25A, VGS =0V 1.0 V Reverse Recovery Time trr IF =25A,VGS =0V 49 ns Reverse Recovery Charge Qrr di/dt = 100 A / s 100 nC Drain to source on-state resistance RDS(on) VDS=-10V,VGS=0,f=1MHZ VGS(on)=-30V,ID=--13A ,VDD=-10V,RG=0 2SJ603 |
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