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BAY80 Datasheet(PDF) 2 Page - Vishay Siliconix |
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BAY80 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page BAY80 Vishay Telefunken Rev. 2, 01-Apr-99 2 (4) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85553 Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=0.1mA VF 0.4 0.52 V g IF=10 mA VF 0.63 0.78 V IF=50 mA VF 0.73 0.92 V IF=100mA VF 0.78 1 V IF=150mA VF 1.07 V Reverse current VR=120V IR 100 nA VR=120 V, Tj=150°C IR 100 mA Breakdown voltage IR=100mA, tp/T=0.01, tp=0.3ms V(BR) 150 V Diode capacitance VR=0, f=1MHz CD 1.5 5 pF Differential forward resistance IF=10mA rf 5 W Reverse recovery time IF=IR=30mA, iR=3mA, RL=100W trr 50 ns Characteristics (Tj = 25_C unless otherwise specified) 0 40 80 120 160 0.01 0.1 1 10 1000 Tj – Junction Temperature ( °C ) 200 94 9084 100 Scattering Limit VR =VRRM Figure 1. Reverse Current vs. Junction Temperature 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF – Forward Voltage ( V ) 2.0 94 9085 Scattering Limit Tj =25°C Figure 2. Forward Current vs. Forward Voltage |
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