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2SK3113 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK3113 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type IC www.kexin.com.cn 1 MOSFET SMD Type 2.3 0.60+0.1 -0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4.60+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 0.127 max TO-252 Unit: mm 1Gate 2Drain 3Source MOS Field Effect Transistor 2SK3113 Features Low on-state resistance RDS(on) =4.4 MAX. (VGS =10V, ID =1.0 A) Low gate charge QG = 9 nC TYP. (VDD =450 V, VGS =10V, ID =2.0 A) Gate voltage rating 30 V Avalanche capability ratings Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V ID 2.0 A Idp * 8.0 A Power dissipation TC=25 20 TA=25 1.0 Channel temperature Tch 150 Storage temperature Tstg -55to+150 *PW 10 s,Duty Cycle 1% Drain current PD W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=600V,VGS=0 100 A Gate leakage current IGSS VGS= 30V,VDS=0 10 A Gate to source cut off voltage VGS(off) VDS=10V,ID=1mA 2.5 3.5 V Forward transfer admittance Yfs VDS=10V,ID=1.0A 0.5 S Drain to source on-state resistance RDS(on) VGS=10V,ID=1.0A 3.3 4.4 Input capacitance Ciss 260 pF Output capacitance Coss 60 pF Reverse transfer capacitance Crss 5pF Turn-on delay time ton 7ns Rise time tr 2ns Turn-off delay time toff 22 ns Fall time tf 9 ns VDS=10V,VGS=0,f=1MHZ ID=1.0A,VGS(on)=10V,VDD=150V,RG=10 ,RL=10 |
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