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2SJ325 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SJ325 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type IC www.kexin.com.cn 1 MOSFET SMD Type 2.3 0.60+0.1 -0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4.60+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 0.127 max TO-252 Unit: mm 1Gate 2Drain 3Source MOS Field Effect Power Transistors 2SJ325 Features Low on-state resistance RDS(on)=83m (VGS=-10V,ID=-2A) RDS(on)=0.15 (VGS=-4V,ID=-1.6A) Built-in G-S Gate Protection Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS -30 V Gate to source voltage (DC) VGSS -20,+10 V Gate to source voltage (AC) VGSS 20 V Drain current (DC) ID 4.0 A Drain current(pulse) * ID 16 A Power dissipation TC=25 20 W TA=25 1.0 W Channel temperature Tch 150 Storage temperature Tstg -55to+150 *PW 10 s; d 1%. PD |
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