BFP181TRW datasheet(3/5 Pages) VISHAY

Part #	BFP181TRW

Description	Silicon NPN Planar RF Transistor

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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3 / 5 page

BFP181T / BFP181TW / BFP181TRW

Document Number 85012

Rev. 1.4, 02-Mar-05

Vishay Semiconductors

www.vishay.com

3

Electrical AC Characteristics

Tamb = 25 °C, unless otherwise specified

Package Dimensions in mm

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Transition frequency

VCE = 3 V, IC = 6 mA,

f = 500 MHz

fT

6.8

GHz

VCE = 8 V, IC = 10 mA,

f = 500 MHz

fT

8.0

GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

0.3

pF

Collector-emitter capacitance

VCE = 10 V, f = 1 MHz

Cce

0.2

pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

0.45

pF

Noise figure

VCE = 5 V, IC = 3 mA, ZS = ZSopt,

f = 900 MHz

F1.5

dB

VCE = 5 V, IC = 3 mA, ZS = ZSopt,

f = 1.75 GHz

F2.2

dB

Power gain

VCE = 8 V, IC = 8 mA, ZS = 50 Ω,

ZL = ZLopt, f = 900 MHz

Gpe

16.5

dB

VCE = 8 V, IC = 8 mA, ZS = 50 Ω,

ZL = ZLopt, f = 1.75 GHz

Gpe

13.5

dB

Transducer gain

VCE = 8 V, IC = 8 mA, Z0 = 50 Ω,

f = 900 MHz

|S21e|

2

16

dB

Mounting Pad Layout

96 12240

0.50(0.020)

0.35 (0.014)

1.8 (0.070)

1.6 (0.062)

0.9 (0.035)

0.75 (0.029)

2.0 (0.078)

1.8 (0.070)

3.0 (0.117)

2.8 (0.109)

0.15 (0.006)

0.08 (0.003)

1.1 (0.043)

0.9 (0.035)

0...0.1 (0...0.004)

ISO Method E

0.65 (0.025)

1.17 (0.046)

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