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A1280A-1PQ176C Datasheet(PDF) 5 Page - Actel Corporation

Part # A1280A-1PQ176C
Description  ACT2 Family FPGAs
Download  38 Pages
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Manufacturer  ACTEL [Actel Corporation]
Direct Link  http://www.actel.com
Logo ACTEL - Actel Corporation

A1280A-1PQ176C Datasheet(HTML) 5 Page - Actel Corporation

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v4.0
5
ACT 2 Fam i l y FP G A s
P ack ag e Th er m a l Ch ar ac t e r i st i c s
The device junction to case thermal characteristic is
θjc,
and the junction to ambient air characteristic is
θja. The
thermal characteristics for
θja are shown with two different
air flow rates.
Maximum junction temperature is 150°C.
A sample calculation of the absolute maximum power
dissipation allowed for a PQFP 160-pin package at
commercial temperature is as follows:
P o w e r D i s s ip a t io n
P = [ICCstandby + ICCactive] * VCC + IOL * VOL * N +
IOH * (VCC – VOH) * M
Where:
ICC standby is the current flowing when no inputs or outputs
are changing.
ICC active is the current flowing due to CMOS switching.
IOL, IOH are TTL sink/source currents.
VOL, VOH are TTL level output voltages.
N equals the number of outputs driving TTL loads to VOL.
M equals the number of outputs driving TTL loads to VOH.
An accurate determination of N and M is problematical
because their values depend on the family type, design
details, and on the system I/O. The power can be divided
into two components: static and active.
S tat i c P o w e r Co m ponen t
Actel FPGAs have small static power components that
result in lower power dissipation than PALs or PLDs. By
integrating multiple PALs/PLDs into one FPGA, an even
greater reduction in board-level power dissipation can be
achieved.
The power due to standby current is typically a small
component of the overall power. Standby power is
calculated below for commercial, worst case conditions.
ICC
VCC
Power
2 mA
5.25V
10.5 mW
The static power dissipated by TTL loads depends on the
number of outputs driving high or low and the DC load
current. Again, this value is typically small. For instance, a
32-bit bus sinking 4 mA at 0.33 V will generate 42 mW with
all outputs driving low, and 140 mW with all outputs driving
high. The actual dissipation will average somewhere
between as I/Os switch states with time.
Ac ti v e P o wer Com p o nent
Power dissipation in CMOS devices is usually dominated by
the active (dynamic) power dissipation. This component is
frequency dependent, a function of the logic and the
external I/O. Active power dissipation results from charging
internal
chip
capacitances
of
the
interconnect,
unprogrammed antifuses, module inputs, and module
outputs, plus external capacitance due to PC board traces
Package Type
Pin Count
θjc
θja
Still Air
θja
300 ft/min
Units
Ceramic Pin Grid Array
100
132
176
5
5
8
35
30
23
17
15
12
°C/W
°C/W
°C/W
Ceramic Quad Flat Pack
172
8
25
15
°C/W
Plastic Quad Flat Pack1
100
144
160
13
15
15
48
40
38
40
32
30
°C/W
°C/W
°C/W
Plastic Leaded Chip Carrier2
84
12
37
28
°C/W
Very Thin Quad Flat Pack3
100
12
43
35
°C/W
Thin Quad Flat Pack4
176
15
32
25
°C/W
Notes:(Maximum Power in Still Air)
1.
Maximum Power Dissipation for PQFP packages are 1.9 Watts (100-pin), 2.3 Watts (144-pin), and 2.4 Watts (160-pin).
2.
Maximum Power Dissipation for PLCC packages is 2.7 Watts.
3.
Maximum Power Dissipation for VQFP packages is 2.3 Watts.
4.
Maximum Power Dissipation for TQFP packages is 3.1 Watts.
Max. junction temp. (°C) – Max. commercial temp.
θja (°C/W)
-----------------------------------------------------------------------------------------------------------------------------
150°C – 70°C
33°C/W
---------------------------------
2.4 W
==


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