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2N3055H Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N3055H
Description  isc Silicon NPN Power Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N3055H Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
1
isc Silicon NPN Power Transistor
2N3055H
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE=20-70@IC = 4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
APPLICATIONS
·Designed for general-purpose switching and amplifier
Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.52
℃/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCER
Collector-Emitter Voltage
70
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current
7
A
PC
Collector Power Dissipation@TC=25℃
115
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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