BD933 datasheet(2/2 Pages) ISC

Part #	BD933

Description	isc Silicon NPN Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD933/935/937/939/941

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BD933

45

BD935

60

BD937

80

BD939

100

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BD941

IC= 100mA ; IB= 0

120

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 1A; IB= 0.1A

B

0.6

V

VBE(on)

Base-Emitter On Voltage

IC= 1A; VCE= 2V

1.3

V

ICBO

Collector Cutoff Current

VCB= VCBOmax; IE= 0

VCB= VCBOmax; IE= 0,TJ=150℃

0.05

1

mA

ICEO

Collector Cutoff Current

VCE= VCEOmax; IB= 0

0.1

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

0.2

mA

hFE-1

DC Current Gain

IC= 150mA ; VCE= 2V

40

250

hFE-2

DC Current Gain

IC= 1A ; VCE= 2V

25

fT

Current-Gain—Bandwidth Product

IC= 250mA ; VCE= 10V

3

MHz

Switching Times

ton

Turn-On Time

0.4

1.0

μs

toff

Turn-Off Time

IC= 1.0A; IB1= -IB2= 0.1A

1.5

3.0

μs

isc Website：www.iscsemi.cn

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