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2SA1535 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1535 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1535/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SA1535 -150 V(BR)CEO Collector-Emitter Breakdown Voltage 2SA1535A IC= -50mA ; IB= 0 -180 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA ; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -2.0 V ICBO Collector Cutoff Current VCB= -150V ; IE= 0 -10 μA hFE-1 DC Current Gain IC= -150mA ; VCE= -10V 90 330 hFE-2 DC Current Gain IC= -0.5A ; VCE= -5V 50 COB Output Capacitance IE= 0; VCB= -10V;ftest= 1MHz 30 pF fT Current-Gain—Bandwidth Product IC= -50mA;VCE= -10V;ftest= 10MHz 200 MHz hFE-1 Classifications Q R S 90-155 130-220 185-330 isc Website:www.iscsemi.cn 2 |
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