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CNY75GC Datasheet(PDF) 3 Page - Vishay Siliconix |
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CNY75GC Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 10 page CNY75A/ B/ C/ GA/ GB/ GC Document Number 83536 Rev. 1.7, 26-Oct-04 Vishay Semiconductors www.vishay.com 3 Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Current Transfer Ratio Switching Characteristics Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 50 mA VF 1.25 1.6 V Reverse current VR = 6 V IR 10 µA Junction capacitance VR = 0, f = 1 MHz Cj 50 pF Parameter Test condition Symbol Min Typ. Max Unit Collector base voltage IC = 100 µAVCBO 90 V Collector emitter voltage IC = 1 mA VCEO 90 V Emitter collector voltage IE = 100 µAVECO 7V Collector-emitter leakage current VCE = 20 V, IF = 0 ICEO 150 nA Parameter Test condition Symbol Min Typ. Max Unit Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz Coupling capacitance f = 1 MHz Ck 0.3 pF Parameter Test condition Part Symbol Min Typ. Max Unit IC/IF VCE = 5 V, IF = 1 mA CNY75GA CTR 15 % CNY75GB CTR 30 % CNY75GC CTR 60 % VCE = 5 V, IF = 10 mA CNY75GA CTR 63 1.25 % CNY75GB CTR 100 200 % CNY75GC CTR 160 320 % Parameter Current Delay Rise time Storage Fall time Turn-on time Turn-off time Turn-on time Turn-off time Test condition VCC = 5 V, RL = 100 Ω (see figure 3) VCC = 5 V, RL = 1.0 kΩ (see figure 4) Symbol IF tD tr tS tf ton toff ton toff Unit mA µs µs µs µs µs µs µs µs CNY75GA 10 2.0 2.5 0.3 2.7 4.5 3.0 10.0 25.0 CNY75GB 10 2.5 3.0 0.3 3.7 5.5 4.0 16.5 20.0 CNY75GC 10 2.8 4.2 0.3 4.7 7.0 5.0 11.0 37.5 |
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