Electronic Components Datasheet Search |
|
MJ11016 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
MJ11016 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Darlington Power Transistor MJ11016 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 0.2A 3.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 0.3A 4.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 20A; IB= 0.2A 3.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 30A; IB= 0.3A 5.0 V ICER Collector Cutoff Current VCE=120V; RBE=1kΩ VCE=120V; RBE=1kΩ; TC=150℃ 1.0 5.0 mA ICEO Collector Cutoff Current VCE= 50V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5.0 mA hFE-1 DC Current Gain IC= 20A, VCE= 5V 1000 hFE-2 DC Current Gain IC= 30A, VCE= 5V 200 |
Similar Part No. - MJ11016 |
|
Similar Description - MJ11016 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |