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2SA1646 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1646 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1646 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A B -0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB= -0.4A B -0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -6A; IB= -0.3A B -1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -8A; IB= -0.4A B -1.5 V ICBO Collector Cutoff Current VCB= -100V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE-1 DC Current Gain IC= -0.5A ; VCE= -2V 100 hFE-2 DC Current Gain IC= -2A ; VCE= -2V 100 400 hFE-3 DC Current Gain IC= -6A ; VCE= -2V 60 COB Output Capacitance IE=0; VCB= -10V;ftest= 1.0MHz 250 pF fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V 150 MHz Switching times ton Turn-on Time 0.3 μs tstg Storage Time 1.5 μs tf Fall Time IC= -6A ,RL= 8.3Ω, IB1= -IB2= -0.3A,VCC= -50V 0.4 μs hFE-2 Classifications M L K 100-200 150-300 200-400 isc Website:www.iscsemi.cn 2 |
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