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2SD1410 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SD1410
Description  isc Silicon NPN Darlington Power Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1410 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1410
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V(Min)
·Collector-Emitter Saturation Voltage-
:V CE(sat)= 2.0V(Max) @IC= 4A
·High DC Current Gain
: hFE= 2000(Min) @ IC= 2A, VCE= 2V
APPLICATIONS
·Igniter applications
·High voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IB
B
Base Current-Continuous
1
A
Collector Power Dissipation
@ Ta=25℃
2.0
PC
Collector Power Dissipation
@ TC=25℃
30
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn


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